Pixel CMOS Design Using Current-Mirror Circuit

Salahuddin, Nur Sultan Pixel CMOS Design Using Current-Mirror Circuit. JURNAL ILMIAH TEKNOLOGI DAN REKAYASA.

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Abstract

This paper explains a study on several photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Mikro Systeme (AMS). Each sensor pixel in the array occupies respectively, Imm x Imm area, 0.5mm x O.5mmarea and 0.2mm 0.2 mm area with fill factor 98 % and total chip area is 2 square millimeters. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low green light emitting diode (less than 0.5 lux). These results allow using our sensor in new Gamma Camera solid-state concept.

Item Type: Article
Uncontrolled Keywords: current-mirror; CMOS; sensor pixel;
Subjects: A General Works > AI Indexes (General)
Divisions: Fakultas Teknologi Industri > Program Studi Teknik Elektro
Depositing User: Mr Reza Chandra
Date Deposited: 28 Feb 2014 08:58
Last Modified: 28 Feb 2014 08:58
URI: http://repository.gunadarma.ac.id/id/eprint/1118

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